Thermal Analysis of a High-Power IGBT Module
Application ID: 121521
This industrial-scale proof of concept (POC) model demonstrates how to perform an electric-thermal analysis of a high-power insulated-gate bipolar transistor module (IGBT module). The module has a rated voltage of 1200 V, and nominal current of 1800 A.
Using a stationary study the device is modeled in the 'on' state, where strong currents pass through the IGBT dies and only a small portion of the current is leaking back through the freewheeling diodes (FWDs). The generated heat is dissipated through a heat sink, and both the currents and the temperature profile are evaluated in the semiconductors, the metallization layers, and the bond wires.
The model uses the Joule Heating multiphysics interface, that combines Electric Currents and Heat Transfer in Solids, together with the Electromagnetic Heating multiphysics coupling. The electric properties of the semiconductor material have been included as a macroscopic effect: an effective conductivity is applied such that the potential drop across the junction agrees with a predetermined (temperature dependent) value.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Tabella delle Funzionalità and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.