CFD and Thermal Simulation of Ring-Lamp-Heated Epitaxial Equipment
Application ID: 152401
In epitaxial growth processes, the uniformity of temperature distribution and the stability of gas flow within the chamber are critical factors determining film quality. This model demonstrate the CFD and thermal analysis of a ring‑lamp‑heated epitaxial reactor chamber, considering the coupling of carrier gas flow, wafer rotation, and thermal radiation from the halogen lamps. Based on the CFD and heat transfer analysis, the three‑dimensional temperature field, velocity field, and radiative heat flux distribution inside the chamber are obtained, with particular emphasis on the temperature uniformity across the wafer surface and the overall flow pattern.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
- COMSOL Multiphysics® and
- Design Module and
- Heat Transfer Module and
- either the CFD Module, or Polymer Flow Module and
- either the CFD Module, Microfluidics Module, or Plasma Module
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Tabella delle Funzionalità and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.
