La Galleria delle Applicazioni raccoglie un'ampia varietà di tutorial e di app dimostrative realizzati con COMSOL Multiphysics in diversi ambiti applicativi, inclusi quelli elettrico, meccanico, fluidico e chimico. E' possibile scaricare i file dei modelli e delle app demo pronti all'uso e le istruzioni step-by-step per costruirli, e utilizzarli come punto di partenza per le proprie simulazioni.
Lo strumento di Ricerca Rapida permette di trovare i modelli che si riferiscono alla propria area di interesse.
Si noti che molti degli esempi qui presentati sono accessibili anche tramite le Librerie delle Applicazioni incorporate nel software COMSOL Multiphysics® e disponibili dal menu File.
This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by ... Per saperne di più
This model demonstrates how to couple the Semiconductor interface to the Heat Transfer in Solids interface. A thermal analysis is performed on the existing bipolar transistor model in the case when the device is operated in the active-forward configuration. The Semiconductor interface ... Per saperne di più
This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D ... Per saperne di più
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". Per saperne di più
This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift–diffusion model. The model uses the Transport of Charge Carriers interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of the EDLs in ... Per saperne di più
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Per saperne di più
This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... Per saperne di più
This model captures the dynamic resistive switching behavior of an oxide-based memristor. The device features a thin metal oxide layer sandwiched between two metal electrodes. When a voltage is applied, oxygen vacancies within the oxide layer migrate, acting as charge carriers and ... Per saperne di più
This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... Per saperne di più
This benchmark model simulates a graded heterojunction using the thermionic emission formulation for the charge transfer over the junction. It shows the additional contribution to the current density from the quantum tunneling effect across the potential barrier, using the WKB ... Per saperne di più
