La Galleria delle Applicazioni raccoglie un'ampia varietà di tutorial e di app dimostrative realizzati con COMSOL Multiphysics in diversi ambiti applicativi, inclusi quelli elettrico, meccanico, fluidico e chimico. E' possibile scaricare i file dei modelli e delle app demo pronti all'uso e le istruzioni step-by-step per costruirli, e utilizzarli come punto di partenza per le proprie simulazioni.
Lo strumento di Ricerca Rapida permette di trovare i modelli che si riferiscono alla propria area di interesse.
Si noti che molti degli esempi qui presentati sono accessibili anche tramite le Librerie delle Applicazioni incorporate nel software COMSOL Multiphysics® e disponibili dal menu File.
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... Per saperne di più
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... Per saperne di più
An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction ... Per saperne di più
This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... Per saperne di più
This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The ... Per saperne di più
This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined. Per saperne di più
This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D ... Per saperne di più
Schottky Contact This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental ... Per saperne di più
This benchmark model simulates a graded heterojunction using the thermionic emission formulation for the charge transfer over the junction. It shows the additional contribution to the current density from the quantum tunneling effect across the potential barrier, using the WKB ... Per saperne di più
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... Per saperne di più