GaAs p-n Junction Infrared LED
Application ID: 20691
This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer.
This kind of device geometry is simple and cheap to produce and similar LEDs are found in many household applications, e.g. the IR emitters in TV remote controls.
In this model the Optical Transition feature is used to calculate the electroluminescence from the device. The electronic properties are computed and the efficiency of the light production is assessed. Also, by visualizing the spacial distribution of the radiative recombination it is possible to make design suggestions to maximize the total efficiency of the output light.
This model example illustrates applications of this type that would nominally be built using the following products:Semiconductor Module
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Tabella delle Funzionalità and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.