La Galleria delle Applicazioni raccoglie un'ampia varietà di tutorial e di app dimostrative realizzati con COMSOL Multiphysics in diversi ambiti applicativi, inclusi quelli elettrico, meccanico, fluidico e chimico. E' possibile scaricare i file dei modelli e delle app demo pronti all'uso e le istruzioni step-by-step per costruirli, e utilizzarli come punto di partenza per le proprie simulazioni.
Lo strumento di Ricerca Rapida permette di trovare i modelli che si riferiscono alla propria area di interesse.
Si noti che molti degli esempi qui presentati sono accessibili anche tramite le Librerie delle Applicazioni incorporate nel software COMSOL Multiphysics® e disponibili dal menu File.
Trench-Gate IGBT 3D
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... Per saperne di più
Interface Trapping Effects of a MOSCAP
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Per saperne di più
DC Characteristics of a MESFET
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... Per saperne di più
A Cross-Bridge Kelvin Resistor Model for the Extraction of Specific Contact Resistivity
This benchmark example builds two models of a cross-bridge Kelvin resistor used for extracting the specific contact resistivity. The first model simulates the system in 3D, using the contact resistance feature built in the Semiconductor interface. The other model is a 2D approximation of ... Per saperne di più
Surface Trapping in a Silicon Nanowire Gate-All-Around Device
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... Per saperne di più
Reverse Recovery of a PIN Diode
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Per saperne di più
Forward Recovery of a PIN Diode
This tutorial simulates the turn-on transient (forward recovery) of a simple PIN diode, based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 242, 2008 edition). The diode is current driven with a constant ramp rate of 1e9, 2e9 and 1e10 A/cm^2/sec and a ... Per saperne di più
Self-Consistent Schrödinger–Poisson Results for a GaAs Nanowire
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... Per saperne di più
Trench-Gate IGBT 2D
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... Per saperne di più
Electrolyte-Gated Organic Field-Effect Transistor
This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift-diffusion model. The model uses the Stabilized Convection-Diffusion Equation interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of ... Per saperne di più