La Galleria delle Applicazioni raccoglie un'ampia varietà di tutorial e di app dimostrative realizzati con COMSOL Multiphysics in diversi ambiti applicativi, inclusi quelli elettrico, meccanico, fluidico e chimico. E' possibile scaricare i file dei modelli e delle app demo pronti all'uso e le istruzioni step-by-step per costruirli, e utilizzarli come punto di partenza per le proprie simulazioni.
Lo strumento di Ricerca Rapida permette di trovare i modelli che si riferiscono alla propria area di interesse.
Si noti che molti degli esempi qui presentati sono accessibili anche tramite le Librerie delle Applicazioni incorporate nel software COMSOL Multiphysics® e disponibili dal menu File.
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Per saperne di più
This app demonstrates the following: Multiple components (1D and 3D) in a single app Using the same choice list in the app as in the model using Data Access functionality Output numerical results for a specific time step using a combo box The app combines the Ray Optics Module and ... Per saperne di più
The Superlattice Band Gap Tool model helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The model uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice ... Per saperne di più
This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The ... Per saperne di più
This model shows how to add several linked mobility models to the simple MOSFET example. Per saperne di più
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... Per saperne di più
This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted ... Per saperne di più
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... Per saperne di più
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... Per saperne di più
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... Per saperne di più
