Model of a CF4/O2 Inductively Coupled Plasma Reactor with RF Bias for Silicon Etching
Application ID: 142031
This tutorial studies the etching of silicon using an inductively coupled plasma reactor with an RF bias in a mixture of CF4/O2. The etching rate is computed along the wafer as a function of the RF bias voltage.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Tabella delle Funzionalità and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.