Presentazioni e Articoli Tecnici

Physical Vapor Transport (PVT) remains the dominant method for the growth of high-quality silicon carbide (SiC) single crystals used in advanced semiconductor applications. The process involves strongly coupled heat transfer, mass transport, and phase transition phenomena under extreme conditions, making predictive modeling essential for process understanding and optimization. In this work, a comprehensive multiphysics model of SiC crystal growth by PVT is presented, developed using COMSOL Multiphysics®. The model captures heat transfer (conduction, radiation), gas-phase species transport, and sublimation–recrystallization kinetics within an industrial-scale reactor model. Particular attention is given to the influence of reactor design and material properties on temperature gradients, growth rates, and crystal morphology. SGL Carbon, as a leading supplier of high-performance graphite and carbon-based components for high-temperature semiconductor processes, brings not only material expertise but also a deep understanding of customer applications. This insight enables the creation of models that reflect realistic operating conditions and component interactions, enhancing their industrial relevance. Beyond physics-based modeling, we complement our simulation approach with proprietary AI-driven optimization tools developed independently of COMSOL. These tools support process engineers by enabling rapid parameter exploration, sensitivity analysis, and data-driven optimization of material and process performance. The combination of multiphysics simulation and machine learning-based optimization opens new pathways for accelerating process development and improving graphite components for high quality in SiC crystal growth. The presented approach demonstrates how integrating detailed simulation with advanced data-driven methods can provide a competitive edge in the development and operation of next-generation semiconductor manufacturing processes.