Modeling of High Temperature Crystal Growth Process

J-.M. Dedulle1,2, F. Mercier1, D. Chaussende1, and M. Pons3
1Laboratoire des Matériaux et du Génie Physique, Grenoble, France
2IRIS Technologies, Grenoble, France
3Science et Ingénierie des Matériaux et Procédés, Saint-Martin d'Hères, France

The main problem for the development of 3C-SiC electronics is the lack of an adapted bulk growth process.

Indeed, sublimation, which is the classical process for the growth of 4H-SiC and 6H-SiC ingots, is not adapted for the 3C polytype because of the solid state transition from cubic to hexagonal crystals, which occurs at high temperature. We therefore choose growth from liquid phase rather than vapor phase.

This paper gives a methodology to optimize coils and details about the modeling of induction heating with COMSOL Multiphysics. Some selected results will be pointed out as they should be considered for the future development of 3C-SiC material.

We have studied the crystals obtained in different configurations, and the role of the thermal gradient from 40oC/cm to less than 5oC/cm in the extent of the crystallization area.