Influence of the Excitation Frequency Increase up to 140 MHz on the VHF-PECVD Technology

S. Leszczynski[1], B. Leszczynska[1], M. Albert[1], J.W. Bartha[1], U. Stephan[2], J. Kuske[2]
[1]Dresden University of Technology, Semiconductor and Microsystems Technology Laboratory, Dresden, Germany
[2]Forschungs- und Applikationslabor Plasmatechnik GmbH, Dresden, Germany
Published in 2013

The plasma enhanced chemical vapor deposition process with a linear plasma source and the frequency range up to 140 MHz developed by Dresden University of Technology and FAP GmbH Dresden enables a fabrication of thin film silicon layers at very high deposition rates. However, an increase of the plasma frequency reduces the electromagnetic wavelength. Therefore, the electric field distribution is simulated to examine an influence of electrical properties and the deposition system geometry on the homogeneity of deposited layers. A detailed electrical model of the linear plasma source for 3D simulation is developed. Additionally, the simulation results are used to create an electrical lumped model of the structure to investigate the influence of the excitation frequency on the structure impedance.